1 . 5 Micron Photonic Devices Based on III - nitrides Grown on Si Substrates
نویسنده
چکیده
Report developed under topic #A10AT015, contract W911NF-10-C-0073. Our goal is to provide the technology base for realizing monolithic emitters and optical amplifiers active at 1.5 micron on Si substrates that are compatible with standard processes of the complementary metal-oxide-semiconductor (CMOS) technology. Our approach is to exploit epitaxial growth of III-nitride semiconductors on Si substrate and in-situ erbium (Er) doping of III-nitrides. During the Phase I supporting period, 3N has demonstrated proof-of-concept of a technology for growth of Er doped III-nitride photonic device structures on (001) Si substrates. More specifically, InGaN:Er and GaN:Er films and p-i-n junction (p-GaN/InGaN/n-GaN:Er) devices operating at 1.54 um wavelength have been designed, fabricated and characterized. Our Phase I results have demonstrated the feasibility to develop active photonic devices operating at wavelength around 1.54 um on silicon wafers that are CMOS compatible. (a) Papers published in peer-reviewed journals (N/A for none) List of papers submitted or published that acknowledge ARO support during this reporting period. List the papers, including journal references, in the following categories: (b) Papers published in non-peer-reviewed journals or in conference proceedings (N/A for none) 0.00 Number of Papers published in peer-reviewed journals: Number of Papers published in non peer-reviewed journals: (c) Presentations 0.00 Number of Presentations: 0.00 Non Peer-Reviewed Conference Proceeding publications (other than abstracts): Number of Non Peer-Reviewed Conference Proceeding publications (other than abstracts): 0 Peer-Reviewed Conference Proceeding publications (other than abstracts): (d) Manuscripts Number of Peer-Reviewed Conference Proceeding publications (other than abstracts): 0 Number of Manuscripts: 0.00
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